Autor: |
윤형섭, 민병규, 장성재, 정현욱, 이종민, 김성일, 장우진, 강동민, 임종원, 김완식, 정주용, 김종필, 서미희, 김소수 |
Zdroj: |
Journal of Korean Institute of Electromagnetic Engineering & Science / Han-Guk Jeonjapa Hakoe Nonmunji; Apr2019, Vol. 30 Issue 4, p282-285, 4p |
Abstrakt: |
A 100-nm gate-length metamorphic high electron mobility transistor(mHEMT) with a T-shaped gate was fabricated using a two-step gate recess and characterized for DC and microwave performance. The mHEMT device exhibited DC output characteristics having drain current(Idss), an extrinsic transconductance(gm) of 1,090 mS/mm and a threshold voltage(Vth) of −0.65 V. The fT and fmax obtained for the 100-nm mHEMT device were 190 and 260 GHz, respectively. The developed mHEMT will be applied in fabricating W-band monolithic microwave integrated circuits(MMICs). [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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