| Autor: |
M Florovič, R Szobolovszký, J Kováč Jr, J Kováč, A Chvála, J-C Jacquet, S L Delage |
| Předmět: |
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| Zdroj: |
Semiconductor Science & Technology; Jun2019, Vol. 34 Issue 6, p1-1, 1p |
| Abstrakt: |
This paper proposes a novel method of average channel temperature and channel temperature profile determination is discussed in theoretical part and subsequently applied to InAlN/AlN/GaN HEMT using quasi-static I–V characterization supported by thermal 3D FEM simulations. Experimentally was determined HEMT source resistance and threshold voltage from low-power output and transfer I–V characteristics at different thermal chuck temperatures. The HEMT channel average temperature nearly 88 °C for dissipated power 2 W was calculated taking advantage of the drain current change analysis applied in recurrent differential form. Additionally, the HEMT channel temperature profile was simulated utilizing the calculated channel dissipated power density. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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