| Autor: |
Rochette, S., Rudolph, M., Roy, A.-M., Curry, M. J., Eyck, G. A. Ten, Manginell, R. P., Wendt, J. R., Pluym, T., Carr, S. M., Ward, D. R., Lilly, M. P., Carroll, M. S., Pioro-Ladrière, M. |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 2/25/2019, Vol. 114 Issue 8, pN.PAG-N.PAG, 5p, 1 Diagram, 2 Graphs |
| Abstrakt: |
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate that, in three devices based on two different versions of this elementary structure, a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in the slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the reservoir, is observed in all devices and is expected to play a role in the sizable tuning orthogonality of the split enhancement gate structure. The all-silicon process is expected to minimize strain gradients from electrode thermal mismatch, while the single gate layer should avoid issues related to overlayers (e.g., additional dielectric charge noise) and help improve the yield. Finally, reservoir gate control of the tunnel barrier has implications for initialization, manipulation, and readout schemes in multi-quantum dot architectures. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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