| Autor: |
Peng, Pei, Tian, Zhongzheng, Li, Muchan, Wang, Zidong, Ren, Liming, Fu, Yunyi |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2019, Vol. 125 Issue 6, pN.PAG-N.PAG, 7p, 1 Diagram, 4 Graphs |
| Abstrakt: |
The ambipolar graphene field-effect transistors (GFETs) usually exhibit Λ-shaped resistance versus gate voltage characteristics (R-Vg curve) with the n- and p-type regions switching at the neutrality points of graphene. However, M-shaped R-Vg curves were frequently observed in our back-gated GFETs without intentional doping. Here, we proposed an implementation of a frequency multiplier using the M-like shape of the R-Vg curve. We first investigated the effect of the channel length and the contact transfer length in a GFET on the shape of the R-Vg curve and then evaluated the influence of the various shapes of R-Vg curves on the performance of the frequency multiplier (including tripler and quadrupler). Finally, a frequency tripler based on a single GFET has been experimentally demonstrated. When applying a sinusoid input signal with a fundamental frequency at a suitable operation area, around 80% output signal power is concentrated at the third harmonic. The excellent output spectral purity makes GFETs with the M-shaped R-Vg curve promising candidates for the frequency multiplier. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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