| Autor: |
Venger, E. F., Venger, I. V., Korsunska, N. O., Melnichuk, L. Yu., Melnichuk, O. V., Khomenkova, L. Yu. |
| Předmět: |
|
| Zdroj: |
Semiconductor Physics, Quantum Electronics & Optoelectronics; 2018, Vol. 21 Issue 4, p417-423, 7p |
| Abstrakt: |
Properties of thin films of ternary alloys MgxZn1-xO on the optically-anisotropic Al2O3 substrates in the area of "residual rays" of film and substrate are first investigated using the method of infrared spectroscopy and dispersion analysis of reflection coefficients. It was established that the changes in thickness of film and content of Mg substantially deform the spectrum of reflection in the area of "residual rays" of film and substrate, decrease the reflectivity. First by means of Kramers-Kronig relations with use of the method of dispersion analysis of infrared reflection spectra, the static dielectric constant of MgxZn1-xO structure has been obtained at different values of x, when orientation is EꓕC. It was ascertained that the MgxZn1-xO/Al2O3 structures are well modelled when using the mutually agreed parameters, obtained earlier for the single crystals of magnesium oxide, zinc oxide and leicosapphire at the orientation EꓕC. It was theoretically shown and experimentally grounded the assurance of the obtained optical parameters of MgxZn1-xO films by the non-destructive method of infrared spectroscopy in the wide spectral range. The obtained results are well agreed with the literature data. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
