| Autor: |
Zhou, Hanhan, Liu, Ming, Williams, Samuel C., Griffin, Lee A., Cress, Cory D., Rivas, Manuel, Rudy, Ryan Q., Polcawich, Ronald G., Glaser, Evan R., Bassiri-Gharb, Nazanin, Hawari, Ayman I., Jones, Jacob L. |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2018, Vol. 124 Issue 24, pN.PAG-N.PAG, 7p, 4 Graphs |
| Abstrakt: |
Thin film ferroelectric capacitors of composition Pb(Zr0.52Ti0.48)O3 were exposed to Fe3+ radiation (1011 to 1013 ions/cm2), and the change in the defect structure was investigated by Doppler broadening positron annihilation spectroscopy and other characterization techniques. As the radiation fluence increases, a systematic drop of the S parameter of the positron annihilation photopeak is observed and attributed to an increase in the Zr- and Ti-site related vacancies relative to the Pb-sites. The results demonstrate that the radiation has a more significant influence on the Zr- and Ti-sites relative to the Pb-sites. It is also observed that the S parameter of the Mn-doped samples is higher than the undoped counterparts. Coupled with ferroelectricity measurements and X-ray diffraction, the results suggest that the Mn dopant modifies the initial structure of the material and leads to a different functional response. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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