| Autor: |
Morisset, Audrey, Cabal, Raphaël, Grange, Bernadette, Marchat, Clément, Alvarez, José, Gueunier-Farret, Marie-Estelle, Dubois, Sébastien, Kleider, Jean-Paul |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings; 2018, Vol. 1999 Issue 1, p1-6, 6p |
| Abstrakt: |
Passivating contacts of crystalline silicon (c-Si) solar cells with a poly-silicon layer (poly-Si) on a thin silicon oxide (SiOx) film offer an interesting approach to decrease the recombination current at the metal/c-Si interface and to increase the cell efficiency. This study focuses on the development of boron-doped poly-Si layers deposited by Plasma Enhanced Chemical Vapour Deposition (PECVD) on top of a thin silicon oxide film. First, the deposition and annealing conditions were optimised in order to: (1) reduce the blistering of the poly-Si on the thin SiOx film and (2) improve the poly-Si conductivity. The passivation properties of the resulting structures have been shown to depend on the blister density and have been improved through a hydrogenation step leading to a maximum implied open-circuit voltage value of 721 mV. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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