| Autor: |
Zhao-Hong Mo, Chao Lu, Yi Liu, Wei Feng, Yun Zhang, Wen Zhang, Shi-Yong Tan, Hong-Jun Zhang, Chun-Yu Guo, Xiao-Dong Wang, Liang Wang, Rui-Zhu Yang, Zhong-Guo Ren, Xie-Gang Zhu, Zhong-Hua Xiong, Qi An, Xin-Chun Lai |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Jun2018, Vol. 27 Issue 6, p1-1, 1p |
| Abstrakt: |
Bilayer superconducting films with tunable transition temperature (Tc) are a critical ingredient to the fabrication of high-performance transition edge sensors. Commonly chosen materials include Mo/Au, Mo/Cu, Ti/Au, and Ti/Al systems. Here in this work, titanium/indium (Ti/In) bilayer superconducting films are successfully fabricated on SiO2/Si (001) substrates by molecular beam epitaxy (MBE). The success in the epitaxial growth of indium on titanium is achieved by lowering the substrate temperature to −150 °C during indium evaporation. We measure the critical temperature under a bias current of 10 μA, and obtain different superconducting transition temperatures ranging from 645 mK to 2.7 K by adjusting the thickness ratio of Ti/In. Our results demonstrate that the transition temperature decreases as the thickness ratio of Ti/In increases. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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