ENERGY LEVEL STRUCTURE OF EXCITONS IN TYPE-II GaAs/AlAs SUPERLATTICES STUDIED BY INDUCED FAR INFRARED ABSORPTION SPECTROSCOPY.

Autor:	Phillips, C. C., Hodge, C. C., Skolnick, M. S., Smith, G. I., Whitehouse, C. R., Dawson, P., Foxon, C. T.
Předmět:	INFRARED absorption PHOTONS SUPERLATTICES EXCITON theory X-ray diffraction RADIATION absorption
Zdroj:	Physics of Semiconductors - Proceedings of the 20th International Conference (In 3 Volumes); 1990, p1581-1584, 4p
Databáze:	Complementary Index
Externí odkaz:	Zobrazit plný text záznamu