| Autor: |
Hasegawa, Kei, Takazawa, Chiaki, Fujita, Makoto, Noda, Suguru, Ihara, Manabu |
| Předmět: |
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| Zdroj: |
CrystEngComm; 4/7/2018, Vol. 20 Issue 13, p1774-1778, 5p |
| Abstrakt: |
Monocrystalline, low-defect density Si thin films were successfully fabricated via epitaxy with 1 minute rapid vapor deposition on a porous seed layer. Zone heating recrystallization reduced the surface roughness of the seed layer to sub-nanometer size. The critical effect of roughness on the defect density of epitaxial films was confirmed. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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