| Autor: |
Jian-Rong Dong, Jing-Hua Teng, D., Soo-Jin Chua, Boon-Chin Foo, D., Yan-Jun Wang, D., Lian-wen Zhang, D., Hai-Rong Yuan, D., Shu Yuan |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 5/1/2004, Vol. 95 Issue 9, p5252-5254, 3p, 3 Graphs |
| Abstrakt: |
Strained AlGaInP/GaInP multiple-quantum-well laser structures have been grown by metalorganic chemical vapor deposition using teriarybutylphosphine as the phosphorus precursor and ridge waveguide lasers of 4 μm wide have been fabricated. Room temperature continuous-wave lasing has been obtained with an emission wavelength of about 670 nm. A single-facet output power of more than 18 mW has been achieved for an as-cleaved laser chip. It can be concluded that it is feasible to fabricate AlGaInP red lasers using less toxic metalorganic source tertiarybutylphosphine in parallel with conventionally used highly toxic PH3. © 2004 American Institute of Physics. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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