| Autor: |
Eric Eugenio-López, Christian Alejandro Mercado-Ornelas, Pallavi Kisan Patil, Irving Eduardo Cortes-Mestizo, José Ángel Espinoza-Figueroa, Andrei Yu Gorbatchev, Satoshi Shimomura, Leticia Ithsmel Espinosa-Vega, Víctor Hugo Méndez-García |
| Zdroj: |
Japanese Journal of Applied Physics; Feb2018, Vol. 57 Issue 2, p1-1, 1p |
| Abstrakt: |
The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (PAs) and the cation/anion terminated surface, i.e., A- or B-type GaAs(631). The self-organization of QDs occurs for both surface types along , while the QD shape and size distribution were found to be different for the self-assembly on the A- and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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