Autor: |
Wigren, C., Ilver, L., Kanski, J., Nilsson, P. O., Karlsson, U. O. |
Zdroj: |
Surface Review & Letters; Feb1998, Vol. 5 Issue 1, p299-303, 5p |
Abstrakt: |
Quantum well states in very thin epitaxial ErAs layers on GaAs(100) have been found in angle-resolved photoelectron spectra. From the dispersive properties of the quantum well states effective masses are obtained representing electron motion parallel to the surface layers and orthogonal to the layers. [ABSTRACT FROM AUTHOR] |
Databáze: |
Complementary Index |
Externí odkaz: |
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