| Autor: |
Pasternak, R., Chatterjee, A., Shirokaya, Y. V., Choi, B. K., Marka, Z., Miller, J. K., Albridge, R. G., Rashkeev, S. N., Pantelides, S. T., Schrimpf, R. D., Fleetwood, D. M., Tolk, N. H. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Dec2003 Part 1 of 2, Vol. 50 Issue 6, p1929-1933, 5p |
| Abstrakt: |
Radiation induced leakage current in a vari- able-thickness SiO&sub2;-on-Si structure (1.0-6.5 nm) is detected and characterized by a novel technique, time-dependent electric field-Induced second-harmonic generation (EFISH). The role of second-harmonic generation (S HG) for in situ monitoring of the DC field across the oxide and its utility in understanding the dynamics of the carriers in response to their photo-injection is discussed. Plausible mechanisms responsible for radiation-induced leakage current through thin oxides are used to explain the experimental results. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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