| Autor: |
Jia-Nan Wei, Hong-Xia Guo, Feng-Qi Zhang, Yin-Hong Luo, Li-Li Ding, Xiao-Yu Pan, Yang Zhang, Yu-Hui Liu |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Aug2017, Vol. 26 Issue 9, p1-1, 1p |
| Abstrakt: |
The impact of ionizing radiation effect on single event upset (SEU) sensitivity of ferroelectric random access memory (FRAM) is studied in this work. The test specimens were firstly subjected to 60Co γ-ray and then the SEU evaluation was conducted using 209Bi ions. As a result of TID-induced fatigue-like and imprint-like phenomena of the ferroelectric material, the SEU cross sections of the post-irradiated devices shift substantially. Different trends of SEU cross section with elevated dose were also found, depending on whether the same or complementary test pattern was employed during the TID exposure and the SEU measurement. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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