| Autor: |
Koichi Onishi, Fumihiro Nakashima, Ge Jin, Daichi Eto, Hayami Hattori, Noriko Miyoshi, Kenta Kirimoto, Yong Sun |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2017, Vol. 122 Issue 6, p065102-1-065102-6, 6p, 9 Graphs |
| Abstrakt: |
The effects of the external electric field on the height of the Schottky barrier at the Gd3N@C80/Au interface were studied by measuring current-voltage characteristics at various temperatures from 200K to 450 K. The Gd3N@C80 sample with the conduction/forbidden/valence energy band structure had a face-centered cubic crystal structure with the average grain size of several nanometers. The height of the Gd3N@C80/Au Schottky barrier was confirmed to be 400 meV at a low electric field at room temperature. Moreover, the height decreases with the increasing external electric field through a change of permittivity in the Gd3N@C80 sample due to a polarization of the [Gd3]9+− [N3- + C(80)6-] dipoles in the Gd3N@C80 molecule. The field-dependence of the barrier height can be described using a power math function of the electric field strength. The results of the field-dependent barrier height indicate that the reduction in the Schottky barrier is due to an image force effect of the transport charge carrier at the Gd3N@C80/Au interface. VC 2017 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
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