Demonstration of wafer-level white light emitting diode with 92,000 lm luminous flux.

Autor: Zhang, Yibin, Xu, Jianwei, Zhao, Desheng, Huang, Hongjuan, Ding, Mingdi, Miao, Zhenlin, Wang, Yanming, He, Peng, Zhang, Baoshun, Cai, Yong
Předmět:
Zdroj: Physica Status Solidi (C); Aug2017, Vol. 14 Issue 8, pn/a-N.PAG, 4p
Abstrakt: A high-power phosphor-converted white wafer-level LED with 92,000 lm was demonstrated. The high-power white LED was manufactured by utilising a blue single wafer-level LED chip coated with a 60-µm-thick thin film phosphor layer. The electrical and optical characteristics of the LED were measured. Results show that the luminous flux and luminous efficacy reach to 92,000 lm and ∼89 lm/W at an input electrical power of 1035 W, respectively. The view angle is about 133°. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index