| Autor: |
Mo, Jiongjiong, Chen, Hua, Wang, Liping, Yu, Faxin |
| Zdroj: |
Journal of Electronic Testing; Apr2017, Vol. 33 Issue 2, p255-259, 5p |
| Abstrakt: |
In this paper, Total Ionizing Dose (TID) and Single Event Burnout (SEB) effects are investigated on self-developed power VDMOS devices with breakdown voltage (BV) of 200 V. Different inter layer dielectrics (ILD) including Borophosphosilicate glass (BPSG) and SiN, and different passivation layers including SiN and SiO are tested to evaluate their radiation hardness. The TID results indicate that the threshold voltage V of VDMOS is negatively shifted after radiation, and can barely be recovered by post TID annealing. As an ILD layer, SiN is proved to be better than BPSG with less V shift. Passivation layer can also influence the TID hardness, which increases with the layer thickness. Heavy ion radiation tests indicate that the devices with different ILD and passivation designs can barely influence the SEB effects. All tested devices with normal breakdown voltage of 200 V cannot survive at V more than 80 V under heavy ion radiation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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