Surface Functionalization of WO Thin Films with (3-Aminopropyl)triethoxysilane and Succinic Anhydride.

Autor: Ta, Thi, Tran, Thi, Tran, Quang, Pham, Duy, Pham, Kim, Cao, Thi, Kim, Yong, Tran, Dai, Ju, Heongkyu, Phan, Bach
Předmět:
Zdroj: Journal of Electronic Materials; Jun2017, Vol. 46 Issue 6, p3345-3352, 8p, 1 Color Photograph, 1 Black and White Photograph, 1 Diagram, 3 Graphs
Abstrakt: We report effects of oxygen plasma treatment on the surface functionalization of WO thin films with (3-aminopropyl)triethoxysilane (APTES) and succinic anhydride (SA). X-ray diffraction and x-ray photoelectron spectroscopy results indicate the existence of the WO phase. Fourier transform infrared spectroscopy measurement shows clear bands at 1040 cm (Si-O-Si), 1556 cm (N-H), 1655 cm (C=O), 2937 cm (C-H) and 3298 cm (N-H), confirming the surface functionalization efficiency enhanced by prior treatment of oxygen plasma. It thus follows that the prior oxygen plasma treatment activates hydroxylation with more -OH groups on the WO surface, which can pave a highly efficient way to the surface functionalization by APTES and SA. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index