| Autor: |
Doyle, J., Young Jun Lee, J., Yong-Bin Kim, J., Wilsch, H., Lombardi, F. |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Jan2004, Vol. 39 Issue 1, p252-255, 4p, 1 Black and White Photograph, 2 Diagrams, 3 Graphs |
| Abstrakt: |
A CMOS subbandgap reference circuit with 1-V supply voltage is described. To obtain subbandgap reference voltages with a 1-V supply voltage, threshold voltage reduction and subthreshold operation techniques are used. Large ΔV[sub BE] (100 mV) as well as a 90-dB operational amplifier are used to circumvent the amplifier offset. A power-on-reset (POR) circuit is used as startup. This circuit has been implemented using a standard 0.5-µm CMOS process, and its size is 940 µm × 1160 µm. The temperature coefficient is 17 ppm from -40°C to 125°C after resistor trimming and the minimum power supply voltage is 0.95 V. The measured total current consumption is below 10 µA and the measured output voltage is 0.631 V at room temperature. Index TermsσCMOS; current source; power-on-reset (POR) circuit; subbandgap reference voltage circuit; subthreshold operation; stability; temperature sensitivity. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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