| Autor: |
Omprakash, Anup P., Fleetwood, Zachary E., Raghunathan, Uppili S., Ildefonso, Adrian, Cardoso, Adilson S., Lourenco, Nelson E., Babcock, Jeffrey, Mukhopadhyay, Rajarshi, Zhang, En Xia, McMarr, Patrick J., Fleetwood, Daniel M., Cressler, John D. |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Nuclear Science; Jan2017, Vol. 64 Issue 1, part 1, p277-284, 8p |
| Abstrakt: |
Total ionizing dose (TID) effects are evaluated for a high-voltage (>30 V) complementary SiGe on SOI technology. Devices are irradiated with 10-keV X-rays at doses up to 5 Mrad(SiO2). The results depend strongly on collector-to-emitter bias, in both forward- and inverse-mode. An anomalous reduction in current gain at high injection in forward-mode operation is observed at doses >500 krad(SiO2). Calibrated 2-D TCAD simulations suggest that this high injection phenomenon is primarily due to interface traps near the STI/Si interface, which is exhibited as a collector resistance increase in the forward Gummel characteristics. Additionally, a strong collector doping dependence is observed, which indicates that this is primarily driven by the thick and lightly doped collector used in this technology. These results illustrate, that high concentrations of interface traps at the STI can have a strong impact on the forward-mode TID response of SiGe HBTs. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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