| Autor: |
Xiao-Yu Pan, Hong-Xia Guo, Yin-Hong Luo, Feng-Qi Zhang, Li-Li Ding, Jia-Nan Wei, Wen Zhao |
| Předmět: |
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| Zdroj: |
Chinese Physics B; Jan2017, Vol. 26 Issue 1, p1-1, 1p |
| Abstrakt: |
Since the displacement damage induced by the neutron irradiation prior has negligible impact on the performance of the bulk CMOS SRAM, we use the neutron irradiation to degrade the minority carrier lifetime in the regions responsible for latchup. With the experimental results, we discuss the impact of the neutron-induced displacement damage on the SEL sensitivity and qualitative analyze the effectiveness of this suppression approach with TCAD simulation. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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