The Impact of AlN Spacer on Forward Gate Current and Stress-Induced Leakage Current (SILC) of GaN HEMT.
| Autor: | Chen, Chung-hsu, Wang, Dave, Hou, Daniel, Yang, Yuefei, Yau, Wing, Sadler, Robert, Sutton, William, Shim, JeoungChill, Wang, Shiguang |
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| Zdroj: | 2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS); 2016, p1-4, 4p |
| Databáze: | Complementary Index |
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