| Autor: |
Weihua Wu, Zifang He, Shiyu Chen, Jiwei Zhai, Xinyi Liu, Tianshu Lai, Sannian Song, Zhitang Song |
| Předmět: |
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| Zdroj: |
Journal of Applied Physics; 2016, Vol. 120 Issue 16, p165106-1-165106-5, 5p, 4 Graphs |
| Abstrakt: |
Two non-promising phase change materials (SnSe2 and Sb) were prepared through the superlatticelike (SLL) method to explore the suitable phase change layer for phase change memory (PCM) application. The crystallization temperature, activation energy, and 10-year data retention of the SLL [SnSe2(10 nm)/Sb(2 nm)]4 ([SS(10)/S(2)]4) thin film are 185 °C, 3.03 eV, and 116 °C, respectively. The volume change of the SLL [SS(10)/S(2)]4 thin film during the crystallization is as small as 3.5%. The phase transition speed of the SLL [SS(10)/S(2)]4 thin film for crystallization is only about 11.9 ns. PCM cell based on the SLL [SS(10)/S(2)]4 thin film shows high operation speed (20 ns for SET/RESET) and lower power consumption (2.75×10-11 J for RESET operation). [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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