On the DIBL Reduction Effect of Short Channel Carbon Nanotube Field Effect Transistors.

Autor: Aicha, Khial, Djamil, Rechem, Chrifa, Azizi, Mourad, Zaabat
Předmět:
Zdroj: International Journal of Electrical & Computer Engineering (2088-8708); Aug2016, Vol. 6 Issue 4, p1514-1521, 8p
Abstrakt: The Drain Induced Barrier Lowering (DIBL), in carbon Nanotubes-Fet (CNTFETS), is a challenging study that still needs investigation. Based on a numerical model, the Non-Equilibrium Green's Function (NEGF) approach was applied to simulate the DIBL effect in CNTFETS. In this study, the effect of theeength ction...o simulate the DIBL effect in carbon Nanotubes- Fet (CNTFETS), length gate ranging from 10 to 30 nm, for different temperatures (77K, 15K, 300K and 400K) on the DIBL was investigated. Then the variation of DIBL effect as a function of the nanotubes diameter varying over the following chiralities: (13, 0), (16, 0), (19, 0), (23, 0) and (25, 0) was undertaken. Afterworlds, we conducted the variation of DIBL impact as a function of the oxide thickness with the values: 1.5 nm, 3 nm, 4.5 nm, 6 nm and 7 nm. Moreover, the DIBL effect was carried at depending upon the high-k materials such as: SiO2, HfO2, ZrO2, and TiaO2. Finally, a conclusion is made basing at the different findings which revealed that the best reduce of DIBL impact was recorded under a liquid Nitrogen temperature of 77 K. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index