| Autor: |
Billy James Murdoch, Dougal G. McCulloch, James G. Partridge |
| Zdroj: |
Applied Physics Express; Jun2016, Vol. 9 Issue 6, p1-1, 1p |
| Abstrakt: |
Thin films of amorphous n-type zinc tin oxide have been energetically deposited from a filtered cathodic vacuum arc at moderate temperatures. The characteristics of these films span a range suitable for semiconductor devices and transparent conducting oxide interconnects with carrier concentration and mobility dependent on local bonding. X-ray photoelectron spectroscopy (XPS) and electron diffraction have revealed that acceptor-like Sn(II) bonding in the films decreased with increasing growth temperature, resulting in higher n-type carrier concentrations. XPS and in situ Ar plasma treatment showed that downward surface band bending resulted from OH attachment. Persistent photoconductivity was attributed to the photoionization of oxygen vacancies. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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