Simulation study on the feasibility of Si as material for ultra-scaled nanowire field-effect transistors.
Autor: | Stanojevic, Z., Baumgartner, O., Karner, M., Mitterbauer, F., Demel, H., Kernstock, C. |
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Zdroj: | 2016 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS); 2016, p147-150, 4p |
Databáze: | Complementary Index |
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