Simulation study on the feasibility of Si as material for ultra-scaled nanowire field-effect transistors.

Autor: Stanojevic, Z., Baumgartner, O., Karner, M., Mitterbauer, F., Demel, H., Kernstock, C.
Zdroj: 2016 Joint International EUROSOI Workshop & International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS); 2016, p147-150, 4p
Databáze: Complementary Index