Defectivity control of aluminum chemical mechanical planarization in replacement metal gate process of MOSFET.
| Autor: | Zhang Jin, Liu Yuling, Yan Chenqi, He Yangang, Gao Baohong |
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| Zdroj: | Journal of Semiconductors; April 2016, Vol. 37 Issue 4, p1-1, 1p |
| Databáze: | Complementary Index |
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