Gate-first high-k/metal gate DRAM technology for low power and high performance products.
| Autor: | Sung, Minchul, Jang, Se-Aug, Lee, Hyunjin, Ji, Yun-Hyuck, Kang, Jae-Il, Jung, Tae-O, Ahn, Tae-Hang, Son, Yun-Ik, Kim, Hyung-Chul, Lee, Sun-Woo, Lee, Seung-Mi, Lee, Jung-Hak, Baek, Seung-Beom, Doh, Eun-Hyup, Cho, Heung-Jae, Jang, Tae-Young, Jang, Il-Sik, Han, Jae-Hwan, Ko, Kyung-Bo, Lee, Yu-Jun |
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| Zdroj: | 2015 IEEE International Electron Devices Meeting (IEDM); 1/1/2015, p1.4-26.6.4, 0p |
| Databáze: | Complementary Index |
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