| Autor: |
Eidelman, K. B., Shcherbachev, K. D., Tabachkova, N. Yu., Goryachev, A. V., Migunov, D. M., Dronova, D. A. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2015, Vol. 7 Issue 4, p04028-1-04028-3, 3p |
| Abstrakt: |
This paper presents the research the formation of zinc-containing nanoparticles (NPs) in Si (001) after double-step hot implantation of 64Zn+ and 16O+ ions. High-resolution Transmission Electron Microscopy (HRTEM) and X-ray Diffraction (XRD) methods were used to study a crystal structure of the samples. Depth profiles of implanted impurity atoms were measured by Secondary Ion Mass Spectrometry (SIMS). Zn NPs with a size of 3 up to 50 nm were found in the implanted samples. Zinc-containing NPs with the size of 5-10 nm were found in the surface layer of as-implanted Si substrates. The effect of the order of implantation on structural defects and the impurity atoms depth profiles is established. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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