Comparative evaluation of 15 kV SiC MOSFET and 15 kV SiC IGBT for medium voltage converter under same dv/dt conditions.
| Autor: | Vechalapu, Kasunaidu, Bhattacharya, Subhashish, Van Brunt, Edward, Ryu, Sei-Hyung, Grider, Dave, Palmour, John W. |
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| Zdroj: | 2015 European Conference on Circuit Theory & Design (ECCTD); 2015, p927-934, 8p |
| Databáze: | Complementary Index |
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