Room-temperature operation of Si spin MOSFET with high on/off spin signal ratio.

Autor: Takayuki Tahara, Hayato Koike, Makoto Kameno, Tomoyuki Sasaki, Yuichiro Ando, Kazuhito Tanaka, Shinji Miwa, Yoshishige Suzuki, Masashi Shiraishi
Zdroj: Applied Physics Express; Nov2015, Vol. 8 Issue 11, p1-1, 1p
Abstrakt: We experimentally demonstrate a Si spin metal–oxide–semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source–drain current and spin signals at room temperature. The spin channel is nondegenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way for the practical use of the Si spin MOSFET. [ABSTRACT FROM AUTHOR]
Databáze: Complementary Index