| Autor: |
Takayuki Tahara, Hayato Koike, Makoto Kameno, Tomoyuki Sasaki, Yuichiro Ando, Kazuhito Tanaka, Shinji Miwa, Yoshishige Suzuki, Masashi Shiraishi |
| Zdroj: |
Applied Physics Express; Nov2015, Vol. 8 Issue 11, p1-1, 1p |
| Abstrakt: |
We experimentally demonstrate a Si spin metal–oxide–semiconductor field-effect transistor (MOSFET) that exhibits a high on/off ratio of source–drain current and spin signals at room temperature. The spin channel is nondegenerate n-type Si, and an effective application of gate voltage in the back-gated structure allows the spin MOSFET operation. This achievement can pave the way for the practical use of the Si spin MOSFET. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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