| Autor: |
Xiaodong Yan, Wenjun Li, Islam, S. M., Pourang, Kasra, Huili (Grace) Xing, Fay, Patrick, Jena, Debdeep |
| Předmět: |
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| Zdroj: |
Applied Physics Letters; 10/19/2015, Vol. 107 Issue 16, p1-5, 5p, 4 Graphs |
| Abstrakt: |
By the insertion of thin InxGa1-xN layers into Nitrogen-polar GaN p-n junctions, polarizationinduced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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