| Autor: |
Wu, Charles Q., Sovero, Emilio A., Massey, Bruce |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Sep2003, Vol. 38 Issue 9, p1518-1523, 6p, 3 Black and White Photographs, 2 Diagrams, 1 Chart, 6 Graphs |
| Abstrakt: |
High-gain and high-bandwidth transimpedance amplifiers (TIAs) are required for fiber-optic receiver modules. This paper reports on the design, fabrication, and characterization of a 40-Gb/s TIA for SONET/SDH STS-768/STM-256 applications based on an InP-InGaAs single heterojunction bipolar transistor (SHBT) process developed at Vitesse Semiconductor Corporation (Vitesse Indium Phosphide Release 1 or VIP-l). This amplifier consists of a single-ended input transimpedance pre-amplifier and a differential output post-amplifier. The measured differential transimpedance is 1800 Ω with -3-dB bandwidth greater than 40 GHz. The high gain of this circuit eliminates the need for a standalone limiting amplifier between the conventional transimpedance preamplifier and the demultiplexer in short-reach applications. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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