| Autor: |
Ito, Takayuki, Suguro, Kyoichi, Tamura, Mizuki, Taniguchi, Toshiyuki, Ushiku, Yukihiro, Iinuma, Toshihiko, Itani, Takaharu, Yoshioka, Masaki, Owada, Tatsushu, Imaoka, Yasuhiro, Murayama, Hiromi, Kusuda, Tatasufumi |
| Předmět: |
|
| Zdroj: |
IEEE Transactions on Semiconductor Manufacturing; Aug2003, Vol. 16 Issue 3, p417-422, 6p, 3 Black and White Photographs, 16 Graphs |
| Abstrakt: |
Flash lamp annealing (FLA) technology is proposed as a new method of activating implanted impurities. By optimizing FLA and implantation conditions, junction depth (Xj) at the concentration of 1 × 10[sup 18] cm[sup -3] and the sheet resistance of 13 nm and 700 Ω/s. for As and 14 nm and 770 Ω/sq for BF[sub 2] with junction leakage lower than 1 × 10[sup -16] A/µm² at 1.5 V were successfully obtained without wafer slip and warpage problems. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
|
