| Autor: |
Ivanov, O. N., Sudzhanskaya, I. V. |
| Předmět: |
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| Zdroj: |
Journal of Nano- & Electronic Physics; 2015, Vol. 7 Issue 2, p02044-1-02044-4, 4p |
| Abstrakt: |
Electrical resistance of indium in 7 nm-pore glass has been studied in the temperature 2.3-300 K interval. It was found that material under study undergoes the transition into the superconducting state at TC = 3.9 K. A sharp asymmetric R(T) maximum was found at temperature of 6.4 K. The R(T) dependence has been for the first time analyzed for the normal phase. It was found that the temperature dependence of the resistance in the temperature 15-80 K interval can be described by tunnelling mechanism of the charge carriers in the frames of the Sheng's model. Material under study can be considered as electrically inhomogeneous material in which metallic domains in pores are contacting each other via dielectric bridges of glass matrix. A charge transfer between the metallic domains can be realized by the electron tunneling through the potential barriers corresponding to the dielectric bridges. [ABSTRACT FROM AUTHOR] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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