16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using Vt, cancel write method.
Autor: | Matsuzaki, Takanori, Onuki, Tatsuya, Nagatsuka, Shuhei, Inoue, Hiroki, Ishizu, Takahiko, Ieda, Yoshinori, Yamade, Naoto, Miyairi, Hidekazu, Sakakura, Masayuki, Atsumi, Tomoaki, Shionoiri, Yutaka, Kato, Kiyoshi, Okuda, Takashi, Yamamoto, Yoshitaka, Fujita, Masahiro, Koyama, Jun, Yamazaki, Shunpei |
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Zdroj: | 2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers; 2015, p1-3, 3p |
Databáze: | Complementary Index |
Externí odkaz: |