Comparison of duty-cycle effects at room temperature in SiON and HfO2 gate PMOS FETS.
| Autor: | Nguyen, D. D., Kouhestani, C., Kambour, K. E., Bersuker, G., Devine, R. A. B. |
|---|---|
| Zdroj: | 2014 IEEE International Integrated Reliability Workshop Final Report (IIRW); 2014, p143-146, 4p |
| Databáze: | Complementary Index |
| Externí odkaz: |
|