Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation.
Autor: | Li, M. H., Jiang, Y., Zhuo, V. Y. -Q., Yeo, E. -G., Law, L. -T., Lim, K. -G. |
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Zdroj: | 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS); 2014, p1-3, 3p |
Databáze: | Complementary Index |
Externí odkaz: |