Self-compliance SET switching and multilevel TaOx resistive memory by current-sweep operation.

Autor: Li, M. H., Jiang, Y., Zhuo, V. Y. -Q., Yeo, E. -G., Law, L. -T., Lim, K. -G.
Zdroj: 2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS); 2014, p1-3, 3p
Databáze: Complementary Index