| Autor: |
Zaliasl, Samira, Salvia, Jim C., Hill, Ginel C., Chen, Lijun Will, Joo, Kimo, Palwai, Rajkumar, Arumugam, Niveditha, Phadke, Meghan, Mukherjee, Shouvik, Lee, Hae-Chang, Grosjean, Charles, Hagelin, Paul M., Pamarti, Sudhakar, Fiez, Terri S., Makinwa, Kofi A. A., Partridge, Aaron, Menon, Vinod |
| Předmět: |
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| Zdroj: |
IEEE Journal of Solid-State Circuits; Jan2015, Vol. 50 Issue 1, p291-302, 12p |
| Abstrakt: |
This paper describes the first 32 kHz low-power MEMS-based oscillator in production. The primary goal is to provide a small form-factor oscillator (1.5 × 0.8 mm 2 ) for use as a crystal replacement in space-constrained mobile devices. The oscillator generates an output frequency of 32.768 kHz and its binary divisors down to 1 Hz. The frequency stability over the industrial temperature range (–40 °C to 85 °C) is ±100 ppm as an oscillator (XO) or ±3 ppm with optional calibration as a temperature compensated oscillator (TCXO). Supply currents are 0.9 µA for the XO and 1.0 µA for the TCXO at supply voltages from 1.4 V to 4.5 V. The MEMS resonator is a capacitively-transduced tuning fork at 524 kHz. The circuitry is fabricated in 180 nm CMOS and includes low power sustaining circuit, fractional-N PLL, temperature sensor, digital control, and low swing driver. [ABSTRACT FROM PUBLISHER] |
| Databáze: |
Complementary Index |
| Externí odkaz: |
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