Breaking the Trade-Off Between Mobility and On-Off Ratio in Oxide Transistors.

Autor: Chang YC; Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Wang ST; Institute of Pioneer Semiconductor Innovation, Industry Academia Innovation School, National Yang-Ming Chiao Tung University Hsinchu, Hsinchu, 30010, Taiwan., Lee YT; Department of Vehicle Engineering, National Taipei University of Technology, Taipei, 10608, Taiwan., Huang CS; Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Hsu CH; Institute of Pioneer Semiconductor Innovation, Industry Academia Innovation School, National Yang-Ming Chiao Tung University Hsinchu, Hsinchu, 30010, Taiwan., Weng TT; Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Huang CC; Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Chen CW; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, 30010, Taiwan., Chou TT; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, 30010, Taiwan., Chang CY; Taiwan Instrument Research Institute, National Applied Research Laboratories, Hsinchu, 30010, Taiwan., Woon WY; Research & Development, Taiwan Semiconductor Manufacturing Company, Hsinchu, 30075, Taiwan., Lin CL; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan., Sun JY; Institute of Pioneer Semiconductor Innovation, Industry Academia Innovation School, National Yang-Ming Chiao Tung University Hsinchu, Hsinchu, 30010, Taiwan., Lien DH; Institute of Electronics, National Yang-Ming Chiao Tung University, Hsinchu, 30010, Taiwan.; Institute of Pioneer Semiconductor Innovation, Industry Academia Innovation School, National Yang-Ming Chiao Tung University Hsinchu, Hsinchu, 30010, Taiwan.; Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan.
Jazyk: angličtina
Zdroj: Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2024 Dec 09, pp. e2413212. Date of Electronic Publication: 2024 Dec 09.
DOI: 10.1002/adma.202413212
Abstrakt: Amorphous oxide semiconductors (AOS) are pivotal for next-generation electronics due to their high electron mobility and excellent optical properties. However, In 2 O 3 , a key material in this family, encounters significant challenges in balancing high mobility and effective switching as its thickness is scaled down to nanometer dimensions. The high electron density in ultra-thin In 2 O 3 hinders its ability to turn off effectively, leading to a critical trade-off between mobility and the on-current (I on )/off-current (I off ) ratio. This study introduces a mild CF 4 plasma doping technique that effectively reduces electron density in 10 nm In 2 O 3 at a low processing temperature of 70 °C, achieving a high mobility of 104 cm 2 V⁻¹ s⁻¹ and an I on /I off ratio exceeding 10⁸. A subsequent low-temperature post-annealing further improves the critical reliability and stability of CF 4 -doped In 2 O 3 without raising the thermal budget, making this technique suitable for monolithic three-dimensional (3D) integration. Additionally, its application is demonstrated in In 2 O 3 depletion-load inverters, highlighting its potential for advanced logic circuits and broader electronic and optoelectronic applications.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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