Transport diagrams of germanium double quantum dots/Si barriers using photocurrent measurement.

Autor: Wang IH; Institute of Electronics, National Yang Ming Chiao Tung University, Hsin-chu, Taiwan., Chiu YW; Institute of Electronics, National Yang Ming Chiao Tung University, Hsin-chu, Taiwan., Lin HC; Institute of Electronics, National Yang Ming Chiao Tung University, Hsin-chu, Taiwan., Li PW; Institute of Electronics, National Yang Ming Chiao Tung University, Hsin-chu, Taiwan. pwli@nycu.edu.tw.
Jazyk: angličtina
Zdroj: Scientific reports [Sci Rep] 2024 Sep 05; Vol. 14 (1), pp. 20749. Date of Electronic Publication: 2024 Sep 05.
DOI: 10.1038/s41598-024-71177-w
Abstrakt: We reported transport diagrams of self-assembled germanium (Ge) double quantum-dots (DQDs) using direct current measurement under illumination at wavelength (λ) of 850 nm and at the base temperature of 4.5 K. Ge DQDs with a coupling-barrier of Si, tunneling-barriers of Si 3 N 4 , and self-aligned p + -Si reservoirs were fabricated in a self-organized CMOS approach. Charge transport through the Ge-DQDs is facilitated by photon-assisted tunneling. Characteristic gate-controlled hexagonal-shaped cells over a wide range of hole occupancy are acquired thanks to hard-wall confinement. Large dimensions (ΔV G  > 200 mV) of hexagonal-shaped cells are favored for the operation of charge states, indicating that our Ge DQDs system is less susceptible to shot noises arising from external voltage sources. Estimated intra-QD and inter-QD charging energies are E C,R /E C,L  = 48.9 meV/42.7 meV and E Cm  = 7.8 meV, respectively.
(© 2024. The Author(s).)
Databáze: MEDLINE
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