Perovskite/silicon tandem solar cells with bilayer interface passivation.
Autor: | Liu J; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China. liujiang28@longi.com.; College of Energy, Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, China. liujiang28@longi.com., He Y; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China.; The Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China., Ding L; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China.; College of Energy, Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou, China., Zhang H; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Li Q; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Jia L; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Yu J; Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, China., Lau TW; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China., Li M; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo City, China., Qin Y; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Gu X; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Zhang F; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Li Q; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Yang Y; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Zhao S; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Wu X; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Liu J; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Liu T; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Gao Y; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Wang Y; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Dong X; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Chen H; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Li P; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Zhou T; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Yang M; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Ru X; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Peng F; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Yin S; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Qu M; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China., Zhao D; Huaneng Clean Energy Research Institute, Beijing, China., Zhao Z; Huaneng Clean Energy Research Institute, Beijing, China., Li M; Huaneng Clean Energy Research Institute, Beijing, China., Guo P; International Research Center for Renewable Energy (IRCRE), State Key Laboratory of Multiphase Flow in Power Engineering, Xi'an Jiaotong University, Xi'an, China., Yan H; The Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, China., Xiao C; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo City, China.; Ningbo New Materials Testing and Evaluation Center Co. Ltd, Ningbo City, China., Xiao P; Huaneng Clean Energy Research Institute, Beijing, China. p_xiao@qny.chng.com.cn., Yin J; Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Hong Kong, China. jun.yin@polyu.edu.hk., Zhang X; Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory of Advanced Negative Carbon Technologies, Soochow University, Suzhou, China. xiaohong_zhang@suda.edu.cn., Li Z; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China. lzg@longi.com., He B; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China. hebo3@longi.com., Xu X; LONGi Central R&D Institute, LONGi Green Energy Technology Co. Ltd, Xi'an, China. xuxixiang@longi.com. |
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Jazyk: | angličtina |
Zdroj: | Nature [Nature] 2024 Nov; Vol. 635 (8039), pp. 596-603. Date of Electronic Publication: 2024 Sep 05. |
DOI: | 10.1038/s41586-024-07997-7 |
Abstrakt: | Two-terminal monolithic perovskite/silicon tandem solar cells demonstrate huge advantages in power conversion efficiency compared with their respective single-junction counterparts 1,2 . However, suppressing interfacial recombination at the wide-bandgap perovskite/electron transport layer interface, without compromising its superior charge transport performance, remains a substantial challenge for perovskite/silicon tandem cells 3,4 . By exploiting the nanoscale discretely distributed lithium fluoride ultrathin layer followed by an additional deposition of diammonium diiodide molecule, we have devised a bilayer-intertwined passivation strategy that combines efficient electron extraction with further suppression of non-radiative recombination. We constructed perovskite/silicon tandem devices on a double-textured Czochralski-based silicon heterojunction cell, which featured a mildly textured front surface and a heavily textured rear surface, leading to simultaneously enhanced photocurrent and uncompromised rear passivation. The resulting perovskite/silicon tandem achieved an independently certified stabilized power conversion efficiency of 33.89%, accompanied by an impressive fill factor of 83.0% and an open-circuit voltage of nearly 1.97 V. To the best of our knowledge, this represents the first reported certified efficiency of a two-junction tandem solar cell exceeding the single-junction Shockley-Queisser limit of 33.7%. Competing Interests: Competing interests: A patent application (No. 202310730135.2, filed in China) that covers the asymmetrically sized texturing used in this work has been submitted. (© 2024. The Author(s), under exclusive licence to Springer Nature Limited.) |
Databáze: | MEDLINE |
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