| Autor: |
Zhang Z; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States., Hoang L; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Hocking M; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States., Peng Z; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States., Hu J; Department of Applied Physics, Stanford University, Stanford, California 94305, United States., Zaborski G Jr; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States., Reddy PD; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States., Dollard J; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States., Goldhaber-Gordon D; Department of Physics, Stanford University, Stanford, California 94305, United States.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States., Heinz TF; Department of Applied Physics, Stanford University, Stanford, California 94305, United States.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States.; Department of Photon Sciences, Stanford University, Stanford, California 94305, United States., Pop E; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States.; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.; Precourt Institute for Energy, Stanford University, Stanford, California 94305, United States., Mannix AJ; Department of Materials Science & Engineering, Stanford University, Stanford, California 94305, United States.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, United States. |
| Abstrakt: |
Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS 2 growth with tunable morphologies─from separated single-crystal domains to continuous monolayer films─on a variety of substrates, including sapphire, SiO 2 , and Au. These WS 2 films exhibit narrow neutral exciton photoluminescence line widths down to 27-28 meV and room-temperature mobility up to 34-36 cm 2 V -1 s -1 . Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS 2 , Mo x W 1- x S 2 alloys, and in-plane WS 2 -MoS 2 heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale. |
