Telecom-band multiwavelength vertical emitting quantum well nanowire laser arrays.

Autor: Zhang X; Frontiers Science Center for Flexible Electronics, Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials & Engineering, Northwestern Polytechnical University, 127 West Youyi Road, 710072, Xi'an, China., Zhang F; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia., Yi R; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China., Wang N; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia., Su Z; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia., Zhang M; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China., Zhao B; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China., Li Z; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia., Qu J; Australian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia., M Cairney J; Australian Centre for Microscopy and Microanalysis, the University of Sydney, Sydney, NSW 2006, Australia., Lu Y; School of Engineering, College of Engineering, The Australian National University, Canberra, ACT 2600, Australia., Zhao J; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China., Gan X; Key Laboratory of Light Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, and Shaanxi Key Laboratory of Optical Information Technology, School of Physical Science and Technology, Northwestern Polytechnical University, 710129, Xi'an, China. xuetaogan@nwpu.edu.cn., Tan HH; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.; ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia., Jagadish C; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia.; ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia., Fu L; Department of Electronic Materials Engineering, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia. lan.fu@anu.edu.au.; ARC Centre of Excellence for Transformative Meta-Optical Systems, Research School of Physics, The Australian National University, Canberra, ACT 2600, Australia. lan.fu@anu.edu.au.
Jazyk: angličtina
Zdroj: Light, science & applications [Light Sci Appl] 2024 Sep 04; Vol. 13 (1), pp. 230. Date of Electronic Publication: 2024 Sep 04.
DOI: 10.1038/s41377-024-01570-7
Abstrakt: Highly integrated optoelectronic and photonic systems underpin the development of next-generation advanced optical and quantum communication technologies, which require compact, multiwavelength laser sources at the telecom band. Here, we report on-substrate vertical emitting lasing from ordered InGaAs/InP multi-quantum well core-shell nanowire array epitaxially grown on InP substrate by selective area epitaxy. To reduce optical loss and tailor the cavity mode, a new nanowire facet engineering approach has been developed to achieve controlled quantum well nanowire dimensions with uniform morphology and high crystal quality. Owing to the strong quantum confinement effect of InGaAs quantum wells and the successful formation of a vertical Fabry-Pérot cavity between the top nanowire facet and bottom nanowire/SiO 2 mask interface, stimulated emissions of the EH 11a/b mode from single vertical nanowires from an on-substrate nanowire array have been demonstrated with a lasing threshold of ~28.2 μJ cm -2 per pulse and a high characteristic temperature of ~128 K. By fine-tuning the In composition of the quantum wells, room temperature, single-mode lasing is achieved in the vertical direction across a broad near-infrared spectral range, spanning from 940 nm to the telecommunication O and C bands. Our research indicates that through a carefully designed facet engineering strategy, highly ordered, uniform nanowire arrays with precise dimension control can be achieved to simultaneously deliver thousands of nanolasers with multiple wavelengths on the same substrate, paving a promising and scalable pathway towards future advanced optoelectronic and photonic systems.
(© 2024. The Author(s).)
Databáze: MEDLINE
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