Few-layer Bi 2 O 2 Se: a promising candidate for high-performance near-room-temperature thermoelectric applications.

Autor: Yip WH; Centre for Micro- and Nano-Electronics (CMNE) School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore., Fu Q; IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore.; School of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore., Wu J; Institute of Material Research and Engineering, Agency for Science Technology and Research, Singapore 138634, Singapore., Hippalgaonkar K; School of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore., Liu Z; School of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore., Wang X; IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore., Boutchich M; IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore.; Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France.; Sorbonne Université, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 75252 Paris, France., Tay BK; Centre for Micro- and Nano-Electronics (CMNE) School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore.; IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore.
Jazyk: angličtina
Zdroj: Nanotechnology [Nanotechnology] 2024 Aug 29; Vol. 35 (46). Date of Electronic Publication: 2024 Aug 29.
DOI: 10.1088/1361-6528/ad7035
Abstrakt: Advancements in high-temperature thermoelectric (TE) materials have been substantial, yet identifying promising near-room-temperature candidates for efficient power generation from low-grade waste heat or TE cooling applications has become critical but proven exceedingly challenging. Bismuth oxyselenide (Bi 2 O 2 Se) emerges as an ideal candidate for near-room-temperature energy harvesting due to its low thermal conductivity, high carrier mobility and remarkable air-stability. In this study, the TE properties of few-layer Bi 2 O 2 Se over a wide temperature range (20-380 K) are investigated, where a charge transport mechanism transitioning from polar optical phonon to piezoelectric scattering at 140 K is observed. Moreover, the Seebeck coefficient ( S ) increases with temperature up to 280 K then stabilizes at∼-200 μ V K -1 through 380 K. Bi 2 O 2 Se demonstrates high mobility (450 cm 2 V -1 s -1 ) within the optimum power factor (PF) window, despite itsT-1.25dependence. The high mobility compensates the minor reduction in carrier density n 2D hence contributes to maintain a robust electrical conductivity∼3 × 10 4 S m -1 . This results in a remarkable PF of 860 μ W m -1 K -2 at 280 K without the necessity for gating ( V g = 0 V), reflecting the innate performance of the as-grown material. These results underscore the considerable promise of Bi 2 O 2 Se for room temperature TE applications.
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Databáze: MEDLINE
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