Defect Analysis in a Long-Wave Infrared HgCdTe Auger-Suppressed Photodiode.

Autor: Kopytko M; Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland., Majkowycz K; Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland., Murawski K; Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland., Sobieski J; Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.; Vigo Photonics S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland., Gawron W; Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.; Vigo Photonics S.A., 129/133 Poznańska St., 05-850 Ożarów Mazowiecki, Poland., Martyniuk P; Institute of Applied Physics, Military University of Technology, 2 Kaliskiego St., 00-908 Warsaw, Poland.
Jazyk: angličtina
Zdroj: Sensors (Basel, Switzerland) [Sensors (Basel)] 2024 Jun 01; Vol. 24 (11). Date of Electronic Publication: 2024 Jun 01.
DOI: 10.3390/s24113566
Abstrakt: Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n + -P + -π-N + photodiode structure was grown by following the metal-organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N + interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber. The latter was interpreted as an isolated point defect, most probably associated with mercury vacancies (V Hg ). Numerical calculations applied to the experimental data showed that this V Hg hole trap is the main cause of increased dark currents in the LWIR photodiode. The determined specific parameters of this trap were the capture cross-section for the holes of σ p = 10 -16 -4 × 10 -15 cm 2 and the trap concentration of N T = 3-4 × 10 14 cm -3 . PL measurements confirmed that the trap lies approximately 83-89 meV above the valence band edge and its location.
Databáze: MEDLINE
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