Wafer Scale Gallium Nitride Integrated Electrode Toward Robust High Temperature Energy Storage.

Autor: Lv S; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China., Wang S; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.; Suzhou Research Institute, Shandong University, Suzhou, 215123, P. R. China., Yu J; Key Laboratory of Processing and Testing Technology of Glass & Functional Ceramics of Shandong Province, School of Materials Science and Engineering, Qilu University of Technology (Shandong Academy of Sciences), Jinan, 250353, P. R. China., Tian G; School of Life Sciences, Shandong First Medical University & Shandong Academy of Medical Sciences, Taian, Shandong, 271000, P. R. China., Wang G; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China., An P; Division of Nuclear Technology and Applications, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China., Song K; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China., Ma B; Division of Nuclear Technology and Applications, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, P. R. China., Li Y; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China., Xu X; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China., Zhang L; Institute of Novel Semiconductors, State Key Lab of Crystal Materials, Shandong University, Jinan, 250100, P. R. China.
Jazyk: angličtina
Zdroj: Small (Weinheim an der Bergstrasse, Germany) [Small] 2024 Jul; Vol. 20 (27), pp. e2310837. Date of Electronic Publication: 2024 Apr 21.
DOI: 10.1002/smll.202310837
Abstrakt: Gallium Nitride (GaN), as the representative of wide bandgap semiconductors, has great prospects in accomplishing rapid charge delivery under high-temperature environments thanks to excellent structural stability and electron mobility. However, there is still a gap in wafer-scale GaN single-crystal integrated electrodes applied in the energy storage field. Herein, Si-doped GaN nanochannel with gallium oxynitride (GaON) layer on a centimeter scale (denoted by GaN NC) is reported. The Si atoms modulate electronic redistribution to improve conductivity and drive nanochannel formation. Apart from that, the distinctive nanochannel configuration with a GaON layer provides adequate active sites and extraordinary structural stability. The GaN-based supercapacitors are assembled and deliver outstanding charge storage capabilities at 140 °C. Surprisingly, 90% retention is maintained after 50 000 cycles. This study opens the pathway toward wafer-scale GaN single-crystal integrated electrodes with self-powered characteristics that are compatible with various (opto)-electronic devices.
(© 2024 Wiley‐VCH GmbH.)
Databáze: MEDLINE
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