Improving Strain-localized GaSe Single Photon Emitters with Electrical Doping.

Autor: Luo W; Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States., Puretzky A; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States., Lawrie B; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States.; Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States., Tan Q; Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States., Gao H; Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States., Swan AK; Department of Electrical Engineering, Boston University, Boston, Massachusetts 02215, United States.; The Photonics Center, Boston University, Boston, Massachusetts 02215, United States.; Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States., Liang L; Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, United States., Ling X; Department of Chemistry, Boston University, Boston, Massachusetts 02215, United States.; The Photonics Center, Boston University, Boston, Massachusetts 02215, United States.; Division of Materials Science and Engineering, Boston University, Boston, Massachusetts 02215, United States.
Jazyk: angličtina
Zdroj: Nano letters [Nano Lett] 2023 Nov 08; Vol. 23 (21), pp. 9740-9747. Date of Electronic Publication: 2023 Oct 25.
DOI: 10.1021/acs.nanolett.3c02308
Abstrakt: Exciton localization through nanoscale strain has been used to create highly efficient single-photon emitters (SPEs) in 2D materials. However, the strong Coulomb interactions between excitons can lead to nonradiative recombination through exciton-exciton annihilation, negatively impacting SPE performance. Here, we investigate the effect of Coulomb interactions on the brightness, single photon purity, and operating temperatures of strain-localized GaSe SPEs by using electrostatic doping. By gating GaSe to the charge neutrality point, the exciton-exciton annihilation nonradiative pathway is suppressed, leading to ∼60% improvement of emission intensity and an enhancement of the single photon purity g (2) (0) from 0.55 to 0.28. The operating temperature also increased from 4.5 K to 85 K consequently. This research provides insight into many-body interactions in excitons confined by nanoscale strain and lays the groundwork for the optimization of SPEs for optoelectronics and quantum photonics.
Databáze: MEDLINE
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